Title :
Internal quantum efficiency of laser diodes
Author :
Claisse, P.R. ; Taylor, Graham W.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The internal quantum efficiency of laser diodes is determined from a consideration of current flow at threshold, and the corresponding quasi-Fermi level separation is used to evaluate the magnitude of all current components. The internal quantum efficiency is shown to be a strong function of temperature and cavity length. The results for single, multiple and strained quantum well structures are compared.
Keywords :
laser theory; semiconductor lasers; GaAs-AlGaAs; InGaAs-AlGaAs; MQW structure; current components; current continuity equation; current flow; internal quantum efficiency; laser diodes; quasi-Fermi level separation; single quantum well structure; strained quantum well structures; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921276
