• DocumentCode
    786735
  • Title

    Internal quantum efficiency of laser diodes

  • Author

    Claisse, P.R. ; Taylor, Graham W.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    28
  • Issue
    21
  • fYear
    1992
  • Firstpage
    1991
  • Lastpage
    1992
  • Abstract
    The internal quantum efficiency of laser diodes is determined from a consideration of current flow at threshold, and the corresponding quasi-Fermi level separation is used to evaluate the magnitude of all current components. The internal quantum efficiency is shown to be a strong function of temperature and cavity length. The results for single, multiple and strained quantum well structures are compared.
  • Keywords
    laser theory; semiconductor lasers; GaAs-AlGaAs; InGaAs-AlGaAs; MQW structure; current components; current continuity equation; current flow; internal quantum efficiency; laser diodes; quasi-Fermi level separation; single quantum well structure; strained quantum well structures; threshold;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921276
  • Filename
    170880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786735