Renormalization group meshes and the discretization of TCAD equations

Author

Schoenmaker, Wim ; Magnus, Wim ; Meuris, Peter ; Maleszka, Bert

Author_Institution

IMEC, Heverlee, Belgium

Volume

21

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

1425

Lastpage

1433

Abstract

This paper presents a new method to discretize the equations for the physical modeling of semiconductor devices and back-end patterns. The method assembles planes in two dimensions and cubes in three dimensions and allows for adaptive meshing without the occurrence of spurious nodes due to mesh smoothing. Whereas the applications that are discussed focus on the design of microelectronic devices, the method is generally applicable to all fields of engineering where ab initio physical modeling is required.

Keywords

mesh generation; renormalisation; semiconductor device models; technology CAD (electronics); TCAD equation; adaptive meshing; back-end pattern; cube assembling method; discretization; mesh smoothing; microelectronic device design; physical model; renormalization group mesh; semiconductor device; Assembly; Integrodifferential equations; Maxwell equations; Microelectronics; Partial differential equations; Piecewise linear approximation; Power engineering and energy; Semiconductor devices; Semiconductor process modeling; Smoothing methods;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2002.804383

Filename

1097862