• DocumentCode
    786858
  • Title

    Surface Effects in Silicon Solar Cells

  • Author

    Brown, R.R.

  • Author_Institution
    The Boeing Company Seattle, Washington
  • Volume
    14
  • Issue
    6
  • fYear
    1967
  • Firstpage
    260
  • Lastpage
    265
  • Abstract
    Very low-energy protons (0.4 to 27.5 kev) were used to study surface effects in silicon solar cells. The types of solar cells tested included conventional cells of n/p and p/n construction, as well as recently developed lithium-doped p/n cells (supplied by Heliotek Inc.). A proton beam of selected energy was used as a probe to penetrate to specified depths within the cells. Characteristic V-I curves were obtained before, during, and after proton exposure. Proton-induced degradation of the cell characteristics were analyzed. Anomalous damage, including partially recoverable losses of open-circuit voltage and significant losses of maximum power, were identified with various regions of the cells by correlation with proton penetration depths.
  • Keywords
    Degradation; Difference equations; Photovoltaic cells; Protons; Radiative recombination; Silicon; Solar power generation; Surface fitting; Testing; Xenon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1967.4324805
  • Filename
    4324805