DocumentCode
786858
Title
Surface Effects in Silicon Solar Cells
Author
Brown, R.R.
Author_Institution
The Boeing Company Seattle, Washington
Volume
14
Issue
6
fYear
1967
Firstpage
260
Lastpage
265
Abstract
Very low-energy protons (0.4 to 27.5 kev) were used to study surface effects in silicon solar cells. The types of solar cells tested included conventional cells of n/p and p/n construction, as well as recently developed lithium-doped p/n cells (supplied by Heliotek Inc.). A proton beam of selected energy was used as a probe to penetrate to specified depths within the cells. Characteristic V-I curves were obtained before, during, and after proton exposure. Proton-induced degradation of the cell characteristics were analyzed. Anomalous damage, including partially recoverable losses of open-circuit voltage and significant losses of maximum power, were identified with various regions of the cells by correlation with proton penetration depths.
Keywords
Degradation; Difference equations; Photovoltaic cells; Protons; Radiative recombination; Silicon; Solar power generation; Surface fitting; Testing; Xenon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1967.4324805
Filename
4324805
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