• DocumentCode
    786884
  • Title

    Activation energy of thin SiO2 films

  • Author

    Ditali, A. ; Black, William

  • Author_Institution
    Micron Semiconductor Inc., Boise, ID, USA
  • Volume
    28
  • Issue
    21
  • fYear
    1992
  • Firstpage
    2014
  • Lastpage
    2016
  • Abstract
    The activation energy of thin SiO2 films was evaluated at varying temperatures, applied electric fields, oxide thicknesses and electrode areas. It was shown that the thermal activation energy is not constant and is dependent on various parameters that have an impact on the breakdown rate of reaction.
  • Keywords
    MOS integrated circuits; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; metal-insulator-semiconductor structures; oxidation; reliability; silicon compounds; activation energy; breakdown rate of reaction; electric fields; electrode areas; oxide thicknesses; temperatures; thin SiO 2 films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921291
  • Filename
    170895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786884