• DocumentCode
    786897
  • Title

    Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors

  • Author

    Newman, Phillip A. ; Wegener, H.A.R.

  • Author_Institution
    NASA, Goddard Space Flight Center
  • Volume
    14
  • Issue
    6
  • fYear
    1967
  • Firstpage
    293
  • Lastpage
    298
  • Abstract
    Experiments indicate that silicon nitride passivation layers on top of thermally grown oxide in conjunction with heat treatment can improve the radiation stability of MISFET devices. In addition, MOSFET devices that have glass passivation layers and other special treatment can also show improved radiation stability.
  • Keywords
    Electrons; FETs; Glass; Heat treatment; Insulation; MISFETs; MOSFET circuits; Passivation; Silicon; Thermal stability;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1967.4324809
  • Filename
    4324809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786897