Title :
Radiation Induced Peaking Effect in Open Geometry P-Channel Mosfets
Author :
Newman, Phillip A. ; Wannemacher, Harry E.
Author_Institution :
NASA Goddard Space Flight Center Greenbelt, Maryland 20771
Abstract :
A shift in the gate threshold voltage of 7 to 9 times its initial value after irradiation with 2 to 6 x 1012 electrons/cm2 of 1.5 Mev electrons is observed for a p-channel enhancement type MOSFET. The effect has only been observed at gate biases greater than -20 V.
Keywords :
Current measurement; Data acquisition; Electrons; Geometry; Insulation; Ionizing radiation; MOSFETs; NASA; Registers; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1967.4324810
