DocumentCode :
787419
Title :
Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates
Author :
Wu, Ming ; Bo, Xiang-Zheng ; Sturm, James C. ; Wagner, Sigurd
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume :
49
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
1993
Lastpage :
2000
Abstract :
We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950°C. The substrates were 0.2-mm thick steel foil coated with 0.5-μm thick SiO2. We employed silicon crystallization times ranging from 6 h (600°C) to 20 s (950°C). Thin-film transistors (TFTs) were made in either self-aligned or nonself-aligned geometries. The gate dielectric was SiO2 made by thermal oxidation or from deposited SiO2. The field-effect mobilities reach 64 cm2/Vs for electrons and 22 cm2/Vs for holes. Complementary metal-oxide-silicon (CMOS) circuits were fabricated with self-aligned TFT geometries, and exhibit ring oscillator frequencies of 1 MHz. These results lay the groundwork for polycrystalline silicon circuitry on flexible substrates for large-area electronic backplanes.
Keywords :
CMOS integrated circuits; crystallisation; foils; integrated circuit technology; oxidation; silicon; steel; substrates; 0.2 mm; 0.5 micron; 600 to 950 degC; CMOS TFT circuits; crystallization; deposited SiO2; field-effect mobilities; gate dielectric; high-temperature polysilicon process; large-area electronic backplanes; nonself-aligned geometries; poly-Si films; polycrystalline silicon; polysilicon films; self-aligned TFT geometries; steel foil substrates; thermal oxidation; thin-film transistors; CMOS process; Circuits; Crystallization; Dielectric substrates; Geometry; Semiconductor films; Silicon; Steel; Temperature; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.804702
Filename :
1097917
Link To Document :
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