Title :
Anomalous phosphorous diffusion
Author :
Suzuki, Kunihiro ; Tashiro, Hiroko ; Tada, Yoko ; Kataoka, Yuji
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
fDate :
11/1/2002 12:00:00 AM
Abstract :
It has been found that P diffuses anomalously at low temperatures in heavily doped regions with doping concentration greater than 7×1020 cm-3. Furthermore, it was found that the anomalous diffusion continues for a certain time period which cannot be suppressed by high-temperature annealing. We evaluated the prominent parameters associated with this anomalous diffusion, the diffusion coefficient, and the time period of this diffusion. We have also succeeded in describing the thermal budget associated with it.
Keywords :
MOSFET; diffusion; doping profiles; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; Si:P; anomalous diffusion; diffusion coefficient; doping concentration; heavily doped regions; low temperature diffusion; nMOSFETs; thermal budget; time period; Annealing; Atomic measurements; Doping; Ion implantation; MOSFETs; Mass spectroscopy; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.804708