• DocumentCode
    787465
  • Title

    Anomalous phosphorous diffusion

  • Author

    Suzuki, Kunihiro ; Tashiro, Hiroko ; Tada, Yoko ; Kataoka, Yuji

  • Author_Institution
    Fujitsu Labs. Ltd., Kanagawa, Japan
  • Volume
    49
  • Issue
    11
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    2031
  • Lastpage
    2035
  • Abstract
    It has been found that P diffuses anomalously at low temperatures in heavily doped regions with doping concentration greater than 7×1020 cm-3. Furthermore, it was found that the anomalous diffusion continues for a certain time period which cannot be suppressed by high-temperature annealing. We evaluated the prominent parameters associated with this anomalous diffusion, the diffusion coefficient, and the time period of this diffusion. We have also succeeded in describing the thermal budget associated with it.
  • Keywords
    MOSFET; diffusion; doping profiles; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; Si:P; anomalous diffusion; diffusion coefficient; doping concentration; heavily doped regions; low temperature diffusion; nMOSFETs; thermal budget; time period; Annealing; Atomic measurements; Doping; Ion implantation; MOSFETs; Mass spectroscopy; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.804708
  • Filename
    1097922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=787465