DocumentCode :
787465
Title :
Anomalous phosphorous diffusion
Author :
Suzuki, Kunihiro ; Tashiro, Hiroko ; Tada, Yoko ; Kataoka, Yuji
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Volume :
49
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
2031
Lastpage :
2035
Abstract :
It has been found that P diffuses anomalously at low temperatures in heavily doped regions with doping concentration greater than 7×1020 cm-3. Furthermore, it was found that the anomalous diffusion continues for a certain time period which cannot be suppressed by high-temperature annealing. We evaluated the prominent parameters associated with this anomalous diffusion, the diffusion coefficient, and the time period of this diffusion. We have also succeeded in describing the thermal budget associated with it.
Keywords :
MOSFET; diffusion; doping profiles; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; Si:P; anomalous diffusion; diffusion coefficient; doping concentration; heavily doped regions; low temperature diffusion; nMOSFETs; thermal budget; time period; Annealing; Atomic measurements; Doping; Ion implantation; MOSFETs; Mass spectroscopy; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.804708
Filename :
1097922
Link To Document :
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