• DocumentCode
    787525
  • Title

    Maximum allowable bulk defect density for generation-recombination noise-free device operation

  • Author

    Hou, Fan-Chi ; Bosman, Gijs ; Law, Mark E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    49
  • Issue
    11
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    2080
  • Lastpage
    2082
  • Abstract
    Generation-recombination noise associated with bulk defect levels in silicon is modeled in a partial differential equation-based device simulator to study the maximum allowable defect density that guarantees generation-recombination (g-r) noise-free operation in the presence of hot-carrier effects and space-charge injection.
  • Keywords
    defect states; electron-hole recombination; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device noise; silicon; space charge; Si; bulk defect density; carrier trapping; generation-recombination noise; hot carrier effects; partial differential equation; semiconductor device; silicon; simulation model; space charge injection; Background noise; Electron traps; Equations; Fluctuations; Noise generators; Noise level; Noise reduction; Photonic band gap; Semiconductor device noise; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.804705
  • Filename
    1097928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=787525