A new Pt/oxide/In/sub 0.49/Ga/sub 0.51/P MOS Schottky diode hydrogen sensor

Author

Liu, Wen-Chau ; Lin, Kun-Wei ; Chen, Huey-Ing ; Wang, Chih-kai ; Cheng, Chin-Chuan ; Cheng, Shiou-Ying ; Lu, Chun-Tsen

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

23

Issue

11

fYear

2002

Firstpage

640

Lastpage

642

Abstract

A new and interesting Pt/oxide/In/sub 0.49/Ga/sub 0.51/P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity of 561% is obtained when a 9090 ppm H/sub 2//air gas is introduced. In addition, an absorption response time less than 1 s under the applied voltage of 0.7 V and 9090 ppm H/sub 2//air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

Keywords

III-V semiconductors; MIS devices; Schottky barriers; Schottky diodes; adsorption; desorption; gallium compounds; gas sensors; hydrogen; indium compounds; platinum; sensitivity; transient response; 0.7 V; 1 s; H; H adsorption; H desorption; H/sub 2/; H/sub 2/ sensor; Pt; Pt/oxide/In/sub 0.49/Ga/sub 0.51/P MOS Schottky diode; Schottky barrier height variation; Schottky diode hydrogen sensor; absorption response time; high detection sensitivity; steady-state response; transient response; Absorption; Delay; Hydrogen; Lead compounds; Schottky barriers; Schottky diodes; Steady-state; Temperature measurement; Temperature sensors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.805006

Filename

1097938