Novel self-convergent programming method using source-induced band-to-band hot electron injection

Author

Liyang Pan ; Jun Zhu ; Zhihong Liu ; Ying Zeng ; Jianzhao Liu

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

23

Issue

11

fYear

2002

Firstpage

652

Lastpage

654

Abstract

The authors describe a novel self-converging programming method using the source-induced band-to-band hot electron (SIBE) injection. This method features low current, high speed, and good reliability, and automatically converges at the desired threshold voltage state without any conventional verification operations. The programming leakage current of this method is only about 3 μA/μm, and the programming time is as low as 30 μs. A threshold voltage model is also proposed and shows good consistency with measured results.

Keywords

PLD programming; flash memories; hot carriers; integrated circuit reliability; integrated memory circuits; leakage currents; 30 mus; SIBE injection; drain leakage current; flash memory; high speed technique; programming leakage current; programming time; reliability; self-convergent programming method; source-induced band-to-band hot electron injection; threshold voltage model; threshold voltage state; write operation; Flash memory; Flash memory cells; Hot carriers; Implants; Leakage current; Nonvolatile memory; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.802603

Filename

1097942