Experimental study on the intrinsic response, optical and electrical parameters of 1.55-μm DFB BH laser diodes during aging tests

Author

Sobiestianskas, Richardas ; Simmons, John G. ; Letal, Greg ; Mallard, Robert E.

Volume

5

Issue

4

fYear

2005

Firstpage

659

Lastpage

664

Abstract

This paper reports on an investigation on the light-current, relative intensity noise, and chirp variations of life-tested InGaAsP/InP multiquantum-well buried heterostructure (BH) laser diodes (LDs). The devices have been stressed at highly accelerated aging conditions (I=170 mA, T=140°C for 3000 h). Typically, the operating current at constant output optical power (I_op) increases logarithmically with time in stable devices while the noise resonance frequency remains stable. High-frequency RF signal-induced chirp for relative stable LDs at constant output power shows very little change with time.

Keywords

III-V semiconductors; chirp modulation; distributed feedback lasers; gallium arsenide; indium compounds; laser reliability; life testing; quantum well lasers; 1.55 micron; 140 C; 170 mA; 3000 h; DFB BH laser diodes; InGaAsP-InP; accelerated aging; aging tests; chirp modulation; distributed feedback lasers; high-frequency RF signal-induced chirp; laser noise; laser reliability; life testing; multiquantum-well buried heterostructure; noise resonance frequency; Accelerated aging; Chirp; Diode lasers; Indium phosphide; Optical devices; Optical noise; Radio frequency; Resonance; Resonant frequency; Testing; Chirp modulation; distributed feedback lasers; laser noise; laser reliability;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2005.860564

Filename

1573681