Title :
Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"
Author :
Tung, C.H. ; Pey, K.L. ; Lin, W.H. ; Radhakrishnan, M.K.
Author_Institution :
Nanyang Technological University
Abstract :
In the above-named work the Fig 1 caption was incorrect. The figure is presented with a corrected caption.
Keywords :
Dielectrics; Epitaxial growth; Instruments; MOSFET circuits; Microelectronics; Semiconductor device manufacture; Silicon; Stress; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.806973
