Calibration of MEMS-based test structures for predicting thermomechanical stress in integrated circuit interconnect structures

This paper uses a rotating-beam-sensor structure to show that the extrinsic stress from the mismatch in expansion coefficient between the aluminum and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150°C reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution X-ray-diffraction measurements and these show that the sensor has a resolution better than 2.8 MPa. Furthermore, we have used the sensor to investigate the variation of in-plane stress with the compliance of the intermetal dielectric, by directly comparing sensors fabricated on SiO₂ and polyimide layers.