Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Author

Fager, Christian ; Pedro, José Carlos ; De Carvalho, Nuno Borges ; Zirath, Herbert

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg, Sweden

Volume

50

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2834

Lastpage

2842

Abstract

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.

Keywords

UHF field effect transistors; UHF power amplifiers; equivalent circuits; intermodulation distortion; power MOSFET; semiconductor device models; IMD characteristics; IMD prediction; LDMOS transistor amplifiers; LDMOS transistor linearity; class-AB power amplifier circuit; empirical large-signal model; intermodulation distortion behaviour; large-signal model; turn-on region; Circuits; Distortion measurement; Frequency measurement; High power amplifiers; Intermodulation distortion; Linearity; Performance analysis; Performance evaluation; Power measurement; Predictive models;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.805187

Filename

1098002