DocumentCode
788144
Title
Room temperature high conduction state in annealed Ca-substituted yttrium iron garnet films
Author
Turpin, G.B. ; Song, Y.J. ; Wigen, P.E.
Author_Institution
Dept. of Phys., Ohio State Univ., Columbus, OH, USA
Volume
31
Issue
6
fYear
1995
fDate
11/1/1995 12:00:00 AM
Firstpage
3835
Lastpage
3837
Abstract
It was discovered that the application of a constant DC field (~10 4 V/cm) at room temperature for several days reversed the changes in the electrical properties produced by thermal annealing in Ca:YIG single crystal films. The electrical conductivity of these films improved by five to seven orders of magnitude during this process to values as much as ten times greater than those of the as-grown state. After the field was removed this new high conduction state was found to be stable. The rate of conductivity increase became exponentially smaller when either the applied field or the temperature were decreased
Keywords
annealing; calcium; electrical conductivity; garnets; magnetic epitaxial layers; semiconductor epitaxial layers; semiconductor materials; yttrium compounds; 20 C; Ca:YIG single crystal films; YFe5O12:Ca; YIG:Ca; annealed Ca-substituted yttrium iron garnet films; constant DC field; electrical conductivity; electrical properties; high conduction state; p-type semiconductor; room temperature; room temperature high conduction state; thermal annealing; Annealing; Conductivity; Garnet films; Iron; Magnetic devices; Magnetic properties; Magnetic semiconductors; Optical films; Temperature; Yttrium;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.489788
Filename
489788
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