Integrated power transistor in 0.18-μm CMOS technology for RF system-on-chip applications

Author

Hsu, Heng-Ming ; Su, Jiong-Guang ; Chen, Chih-Wei ; Tang, Denny D. ; Chen, Chun Hsiung ; Sun, Jack Yuan-Chen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

50

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2873

Lastpage

2881

Abstract

A novel design and performance of a power MOS transistor for RF system-on-chip applications are reported. The power MOS transistor with high breakdown voltage is integrated into 0.18-μm CMOS technology with only one additional mask. By an optimized design considering all aspects of DC and RF performances, a power MOS transistor with 16-GHz cutoff frequency and 24-GHz maximum oscillation frequency has been demonstrated. In addition, the power gain is 12 dB at 2.4 GHz with power-added efficiency of 50%. In this study, the device architectures that include drain engineering, substrate engineering, and gate scaling are investigated comprehensively.

Keywords

CMOS integrated circuits; UHF field effect transistors; UHF integrated circuits; power MOSFET; semiconductor device breakdown; system-on-chip; 0.18 micron; 12 dB; 16 GHz; 2.4 GHz; 24 GHz; 50 percent; CMOS technology; RF SoC applications; RF system-on-chip; drain engineering; gate scaling; high breakdown voltage; integrated power transistor; optimized design; power MOS transistor; power MOSFET; substrate engineering; CMOS technology; Cutoff frequency; MOSFETs; Power amplifiers; Power engineering and energy; Power transistors; Radio frequency; Silicon; Sun; System-on-a-chip;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.805289

Filename

1098007