DocumentCode
788216
Title
40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs
Author
Hayami, R. ; Washio, K.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume
38
Issue
14
fYear
2002
fDate
7/4/2002 12:00:00 AM
Firstpage
707
Lastpage
709
Abstract
A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors´ knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date
Keywords
Ge-Si alloys; bipolar logic circuits; current-mode logic; flip-flops; frequency dividers; heterojunction bipolar transistors; low-power electronics; semiconductor materials; 0.2 micron; 40 GHz; 7.9 mW; SiGe; current-mode-logic frequency divider; low-power frequency divider IC; master-slave flip-flop; millimetre-waveband; power consumption; self-aligned selective-epitaxial-growth HBTs; supply voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020474
Filename
1019825
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