40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs

A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors´ knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date