Title :
High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
Author :
Caliman, A. ; Ramdane, A. ; Meichenin, D. ; Manin, L. ; Sermage, B. ; Ungaro, G. ; Travers, L. ; Harmand, J.C.
Author_Institution :
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France
fDate :
7/4/2002 12:00:00 AM
Abstract :
Very low threshold (9 mA) singlemode ridge waveguide molecular beam epitaxy-grown GaInNAs/GaNAs/GaAs laser diodes emitting at 1.22 μm are reported. A slope efficiency of 0.3 W/A per facet is demonstrated. Optical gain and carrier lifetime measurements are also presented
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; molecular beam epitaxial growth; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.22 micron; 9 mA; GaInNAs-GaNAs-GaAs; GaInNAs/GaNAs/GaAs; carrier lifetime measurements; laser diodes; narrow ridge waveguide; singlemode ridge waveguide; slope efficiency; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020412
