Title :
A fully integrated broad-band amplifier MMIC employing a novel chip-size package
Author :
Yun, Young ; Nishijima, Masaaki ; Katsuno, Motonari ; Ishida, Hidetoshi ; Minagawa, Katsuya ; Nobusada, Toshihide ; Tanaka, Tsuyoshi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
12/1/2002 12:00:00 AM
Abstract :
In this work, we used a novel RF chip-size package (CSP) to develop a broad-band amplifier monolithic microwave integrated circuit (MMIC), including all the matching and biasing components, for Ku- and K-band applications. By utilizing an anisotropic conductive film for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. STO (SrTiO3) capacitors were employed to integrate the dc biasing components on the MMIC. A novel pre-matching technique was used for the gate input and drain output of the FETs to achieve a broad-band design for the amplifier MMIC without any loss of gain. To improve the circuit stability of the amplifier MMIC in the out-of-band, a parallel RC circuit was employed at the input of the amplifier MMIC. The packaged amplifier MMIC exhibited good RF performance and stability over a wide frequency range. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the Ku-/K-band.
Keywords :
MMIC amplifiers; chip scale packaging; circuit stability; wideband amplifiers; K-band; Ku-band; RF chip-size package; SrTiO3; SrTiO3 capacitor; anisotropic conductive film; circuit stability; fabrication process; fully-integrated broad-band amplifier MMIC; parallel RC circuit; pre-matching technique; Application specific integrated circuits; Chip scale packaging; Circuit stability; Integrated circuit packaging; K-band; MMICs; Microwave amplifiers; Microwave integrated circuits; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.805284