• DocumentCode
    788263
  • Title

    Soft magnetic properties of Fe-TM-C-N (TM:Zr,Nb) nanocrystalline films

  • Author

    Ryu, H.J. ; Lee, J.J. ; Han, S.H. ; Kim, H.J. ; Kang, LK ; Choi, J.O.

  • Author_Institution
    Dept. of Metall. Eng., Seoul Nat. Univ., South Korea
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    3868
  • Lastpage
    3870
  • Abstract
    Soft magnetic properties of Fe-TM-C-N (TM:Zr,Nb) films, fabricated by RF reactive sputtering in Ar+N2 atmosphere, were investigated. The as-deposited films having mixed phases of amorphous and α-Fe or mostly crystalline α-Fe phase showed nanocrystalline structure upon annealing. The best soft magnetic properties achieved in these films are; Hc of 0.06 Oe, μ eff 2750 (1 MHz) and 4 πMs, of 16.8 kG in Fe-Zr-C-N film and Hc of 0.31 Oe, μeff of 2100 (1 MHz) and 4 πMs of 15.5 kG in Fe-Nb-C-N film. The fine grained α-Fe structure, together with very fine TM(C,N) precipitates which were formed at an early stage of crystallization, is considered to be one of the main factors for the excellent soft magnetic properties. The Fe-Zr-C-N films exhibit better soft magnetic properties than those of the Fe-Nb-C-N films, which is considered to be due to the magnitude of the formation enthalpy
  • Keywords
    amorphous magnetic materials; annealing; ferromagnetic materials; iron alloys; magnetic particles; nanostructured materials; niobium alloys; precipitation; soft magnetic materials; sputtered coatings; zirconium alloys; 1 MHz; 15.5 kG; 16.8 kG; Fe-Nb-C-N nanocrystalline film; Fe-Zr-C-N nanocrystalline films; FeNbCN; FeZrCN; RF reactive sputtering; amorphous phase; annealing; crystallization; fine grained structure; formation enthalpy; precipitates; soft magnetic properties; Amorphous materials; Annealing; Argon; Atmosphere; Crystallization; Magnetic films; Magnetic properties; Nanostructures; Radio frequency; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.489799
  • Filename
    489799