Title :
Electroluminescence of InAs-GaSb heterodiodes
Author :
Hoffman, Darin ; Hood, Andrew ; Michel, Erick ; Fuchs, Frank ; Razeghi, Manijeh
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
The electroluminescence of a Type II InAs-GaSb superlattice heterodiode has been studied as a function of injection current and temperature in the spectral range between 3 and 13 μm. The heterodiode comprises a Be-doped midwavelength infrared (MWIR) superlattice with an effective bandgap around 270 meV and an undoped long wavelength infrared (LWIR) superlattice with an effective bandgap of 115 meV. At high injection currents and elevated temperatures the band to band transitions of both superlattices can be observed. By increasing the temperature the intensity of the MWIR emission component shows a well defined thermally activated increase. The activation energy of the Beryllium doping was evaluated to be 28 meV.
Keywords :
beryllium; doping; electroluminescence; energy gap; gallium compounds; indium compounds; light emitting diodes; semiconductor heterojunctions; semiconductor superlattices; 28 meV; 3 to 13 mum; Be-doped midwavelength infrared superlattice; InAs-GaSb; InAs-GaSb heterodiodes; InAs-GaSb:Sb; activation energy; band-to-band transitions; beryllium doping; effective bandgap; electroluminescence; injection current; midwavelength infrared emission; thermal activation; type II superlattice heterodiode; undoped long wavelength infrared superlattice; Electroluminescence; Face detection; Infrared detectors; Luminescence; Optical materials; Photonic band gap; Semiconductor diodes; Semiconductor superlattices; Temperature distribution; Temperature measurement; Electroluminescence; InAs–GaSb; Type-II superlattices; heterodiode; semiconductor device radiation effects;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.861621
