• DocumentCode
    788352
  • Title

    Surface Preparation to Obtain Good I-V Characteristics on Germanium Lithium Diodes

  • Author

    deWit, R.C. ; McKenzie, J.M.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey
  • Volume
    15
  • Issue
    3
  • fYear
    1968
  • fDate
    6/1/1968 12:00:00 AM
  • Firstpage
    352
  • Lastpage
    358
  • Abstract
    High voltage breakdown low current diodes have been made by the simple and reproducible process of quenching the final H202-HF etch of the diode with an acqueous salt solution. Of those salts tried CaCl2 gives the best overall performance. Planar diodes 28 mm diameter and 5 mm drift depth have been made with leakage currents < 5×10-10 A for fields up to 600 V/mm. The diode surface noise on these units was less than 0.3 keV. The surface treatment also gives some surface passivation.
  • Keywords
    Diodes; Etching; Germanium; Leakage current; Lithium; Low voltage; Noise figure; Surface fitting; Surface treatment; Telephony;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1968.4324958
  • Filename
    4324958