Title :
Surface Preparation to Obtain Good I-V Characteristics on Germanium Lithium Diodes
Author :
deWit, R.C. ; McKenzie, J.M.
Author_Institution :
Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey
fDate :
6/1/1968 12:00:00 AM
Abstract :
High voltage breakdown low current diodes have been made by the simple and reproducible process of quenching the final H202-HF etch of the diode with an acqueous salt solution. Of those salts tried CaCl2 gives the best overall performance. Planar diodes 28 mm diameter and 5 mm drift depth have been made with leakage currents < 5Ã10-10 A for fields up to 600 V/mm. The diode surface noise on these units was less than 0.3 keV. The surface treatment also gives some surface passivation.
Keywords :
Diodes; Etching; Germanium; Leakage current; Lithium; Low voltage; Noise figure; Surface fitting; Surface treatment; Telephony;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1968.4324958