DocumentCode :
788352
Title :
Surface Preparation to Obtain Good I-V Characteristics on Germanium Lithium Diodes
Author :
deWit, R.C. ; McKenzie, J.M.
Author_Institution :
Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey
Volume :
15
Issue :
3
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
352
Lastpage :
358
Abstract :
High voltage breakdown low current diodes have been made by the simple and reproducible process of quenching the final H202-HF etch of the diode with an acqueous salt solution. Of those salts tried CaCl2 gives the best overall performance. Planar diodes 28 mm diameter and 5 mm drift depth have been made with leakage currents < 5×10-10 A for fields up to 600 V/mm. The diode surface noise on these units was less than 0.3 keV. The surface treatment also gives some surface passivation.
Keywords :
Diodes; Etching; Germanium; Leakage current; Lithium; Low voltage; Noise figure; Surface fitting; Surface treatment; Telephony;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1968.4324958
Filename :
4324958
Link To Document :
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