DocumentCode
788352
Title
Surface Preparation to Obtain Good I-V Characteristics on Germanium Lithium Diodes
Author
deWit, R.C. ; McKenzie, J.M.
Author_Institution
Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey
Volume
15
Issue
3
fYear
1968
fDate
6/1/1968 12:00:00 AM
Firstpage
352
Lastpage
358
Abstract
High voltage breakdown low current diodes have been made by the simple and reproducible process of quenching the final H202-HF etch of the diode with an acqueous salt solution. Of those salts tried CaCl2 gives the best overall performance. Planar diodes 28 mm diameter and 5 mm drift depth have been made with leakage currents < 5Ã10-10 A for fields up to 600 V/mm. The diode surface noise on these units was less than 0.3 keV. The surface treatment also gives some surface passivation.
Keywords
Diodes; Etching; Germanium; Leakage current; Lithium; Low voltage; Noise figure; Surface fitting; Surface treatment; Telephony;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1968.4324958
Filename
4324958
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