DocumentCode
78846
Title
Characterisation of THz emission from double-metal-patterned gallium–arsenide multiple emitters
Author
Gow, P.C. ; McBryde, D. ; Berry, S.A. ; Barnes, M.E. ; Apostolopoulos, V.
Author_Institution
Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
Volume
50
Issue
25
fYear
2014
fDate
12 4 2014
Firstpage
1966
Lastpage
1968
Abstract
Multiplexed gallium-arsenide (GaAs)-based terahertz (THz) emitters fabricated with periodic double-metal structures are demonstrated and the effect of different metals on the THz output is investigated. THz emission originates from the lateral photo-Dember effect and from the different Schottky barrier heights of the chosen metal pair. The metal combinations used were Au-Al, Au-Pb and Cu-Cr. The emitters were characterised according to temperature and the highest peak-to-peak THz emission was achieved with the Cu-Cr metal pairing at 150 K.
Keywords
Dember effect; III-V semiconductors; aluminium; chromium; copper; gallium arsenide; gold; lead; terahertz wave spectra; Au-Al; Au-Pb; Cu-Cr; GaAs; Schottky barrier heights; THz emission; THz output; double-metal-patterned gallium-arsenide multiple emitters; lateral photo-Dember effect; periodic double-metal structures; temperature 150 K;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.2751
Filename
6975788
Link To Document