• DocumentCode
    788469
  • Title

    Design of high-speed master-slave D-type flip-flop in InP DHBT technology

  • Author

    Kasbari, Abed-Elhak ; André, Philippe ; Konczykowska, Agnieszka ; Riet, Muriel ; Blayac, Sylvain ; Ouslimani, Habiba ; Godin, Jean

  • Author_Institution
    Ecole Nationale Superieure des Telecommun., Cergy Pontoise, France
  • Volume
    50
  • Issue
    12
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    3064
  • Lastpage
    3069
  • Abstract
    In this paper, we present some design problems of high-speed master-slave D-type flip-flop (MS D-FF). Essential to the long-haul optical-fiber communication systems, this circuit is critical since it operates at the highest clock frequency for a given bit rate. We discuss specific aspects of electrical design of such a circuit and underline some important points for the layout of gigabit circuits. In particular, we tackle the problem of ringing, which can appear in emitter-follower structures using the fast transistors necessary for high-speed operation. We have pointed out also some difficulties of circuit layout, particularly certain connections that can cause serious ill functioning. The MS D-FF was fabricated in our self-aligned InP double heterojunction-bipolar-transistor technology. On-wafer characterizations at 40 Gb/s show 75% horizontal and 68% vertical eye opening.
  • Keywords
    III-V semiconductors; SONET; bipolar logic circuits; flip-flops; heterojunction bipolar transistors; indium compounds; optical communication equipment; optical fibre networks; time division multiplexing; very high speed integrated circuits; 40 Gbit/s; DHBT technology; InP; bit rate; circuit layout; clock frequency; electrical design; emitter-follower structures; eye opening; gigabit circuits; high-speed master-slave D-type flip-flop; high-speed operation; long-haul optical-fiber communication systems; on-wafer characterizations; ringing; Bit rate; Clocks; DH-HEMTs; Flip-flops; Frequency; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Integrated circuit technology; SONET;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2002.805290
  • Filename
    1098033