Title :
A High-Efficiency SOI CMOS Stacked-FET Power Amplifier Using Phase-Based Linearization
Author :
Unha Kim ; Youngwoo Kwon
Author_Institution :
INMC, Seoul Nat. Univ., Seoul, South Korea
Abstract :
A linearization technique based on the phase correction is proposed for a CMOS stacked-FET power amplifier (PA). The linearizer employs a phase injection circuit as a main linearizer. The phase injection circuit presents envelope-reshaped capacitance to the gate of a driver amplifier to correct for phase compression near saturation. It also helps with AM-AM linearization. Hybrid bias circuit consisting of a diode and a resistor is also employed for static adaptive biasing, which allows the PA to meet stringent linearity requirement across the entire power range. Two stacked-FET linear PAs with the proposed linearizers have been designed using a silicon-on-insulator (SOI) CMOS process at 1.88 and 0.9 GHz. The fabricated PAs show adjacent channel leakage ratios (ACLRs) better than -39 dBc with peak power-added efficiencies (PAEs) of 44.3 and 49.2% at 1.88 and 0.9 GHz, respectively, using 3GPP uplink W-CDMA signal.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; field effect transistors; linearisation techniques; silicon-on-insulator; 3GPP uplink W-CDMA signal; AM-AM linearization; SOI CMOS stacked-FET power amplifier; adjacent channel leakage ratio; frequency 0.9 GHz; frequency 1.88 GHz; hybrid bias circuit; phase based linearization; phase compression; phase correction; phase injection circuit; power-added efficiency; silicon-on-insulator; static adaptive biasing; CMOS integrated circuits; Field effect transistors; Linearization techniques; Multiaccess communication; Power amplifiers; Silicon-on-insulator; CMOS; SOI; W-CDMA; envelope injection; linear; linearization; power amplifier (PA); stacked-FET;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2357782
