Title :
Power losses in PWM-VSI inverter using NPT or PT IGBT devices
Author :
Blaabjerg, Frede ; Munk-Nielsen, Stig
Author_Institution :
Inst. of Energy Technol., Aalborg Univ.
fDate :
5/1/1995 12:00:00 AM
Abstract :
This paper investigates the power losses for two different IGBT technologies (nonpunch through and punch through) for use in PWM-VSI inverters in order to choose the right device technology for a given application. A loss model of the inverter is developed based on experimental determination of the power losses. The loss model is used on two different modulation strategies which are a sine wave with a third harmonic added and a 60°-PWM modulation where only two inverter legs are active at the same time. The two IGBT technologies are characterized on an advanced measurement system which is described. The total power losses in the inverter are estimated by simulation at different conditions and it is concluded that the nonpunch through (NPT) technology is most useful for higher switching frequencies, while the punch through (PT) technology is especially useful at lower switching frequencies and high load currents. It is also concluded that the 60°-PWM modulation has the lowest power losses and the power losses are almost independent of phase angle cos(φ) for normal motor operation
Keywords :
PWM invertors; insulated gate bipolar transistors; losses; power semiconductor switches; switching circuits; 60°-PWM modulation; IGBT devices; PWM-VSI inverter; advanced measurement system; high load currents; higher switching frequencies; lower switching frequencies; modulation strategies; nonpunch through IGBT devices; normal motor operation; phase angle; power losses; punch through IGBT devices; sine wave; third harmonic; Frequency estimation; Insulated gate bipolar transistors; MOSFETs; Paper technology; Phase modulation; Power system modeling; Pulse width modulation inverters; Switching frequency; Testing; Thyristors;
Journal_Title :
Power Electronics, IEEE Transactions on