Title :
Nondestructive RBSOA characterization of IGBTs and MCTs
Author :
Chen, Dan Y. ; Lee, Fred C. ; Carpenter, Grant
Author_Institution :
Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
Nondestructive evaluation of IGBTs and MCTs are reported and their corresponding reverse bias safe operating areas (RBSOAs) established. It was observed that compared to BJTs, IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs
Keywords :
MOS-controlled thyristors; avalanche breakdown; insulated gate bipolar transistors; nondestructive testing; semiconductor device testing; IGBT; MCT; MOS controlled thyristors; RBSOA; avalanche breakdown; dynamic voltage blocking capability loss; insulated gate bipolar transistors; nondestructive evaluation; parasitic transistor; reverse bias safe operating areas; turn-off breakdown characteristics; Avalanche breakdown; Breakdown voltage; Circuit testing; Electric breakdown; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Nondestructive testing; Senior members; Thyristors;
Journal_Title :
Power Electronics, IEEE Transactions on
