DocumentCode
788629
Title
Nondestructive RBSOA characterization of IGBTs and MCTs
Author
Chen, Dan Y. ; Lee, Fred C. ; Carpenter, Grant
Author_Institution
Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
10
Issue
3
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
368
Lastpage
372
Abstract
Nondestructive evaluation of IGBTs and MCTs are reported and their corresponding reverse bias safe operating areas (RBSOAs) established. It was observed that compared to BJTs, IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs
Keywords
MOS-controlled thyristors; avalanche breakdown; insulated gate bipolar transistors; nondestructive testing; semiconductor device testing; IGBT; MCT; MOS controlled thyristors; RBSOA; avalanche breakdown; dynamic voltage blocking capability loss; insulated gate bipolar transistors; nondestructive evaluation; parasitic transistor; reverse bias safe operating areas; turn-off breakdown characteristics; Avalanche breakdown; Breakdown voltage; Circuit testing; Electric breakdown; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Nondestructive testing; Senior members; Thyristors;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.388003
Filename
388003
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