Title :
Design considerations of power MOSFET for high frequency synchronous rectification
Author :
Liang, Ymg C. ; Oruganti, Ramesh ; Oh, Tiong B.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
5/1/1995 12:00:00 AM
Abstract :
Synchronous rectifiers used in high frequency, low output voltage applications are power MOSFETs specially designed to replace the usual output Schottky diodes in order to reduce converter losses. This paper deals with the analysis and design optimization of a synchronous rectifier suitable for applications of 1 to 10 MHz switching-mode power supplies. Three different MOSFET structures were studied and evaluated through detailed 2-dimensional device simulations. The internal parameters are optimized against three major performance factors, namely (1) the recovery time of the body diode, (2) the product of on-state resistance and input capacitance, i.e., the loss factor, and (3) the breakdown voltage of the body diode. Based on the evaluation, the UMOS structure produces the lowest RC loss factor and the shortest body diode reverse recovery. The final design optimization of the UMOS was then carried out and an optimized device is presented as the final design
Keywords :
capacitance; electric breakdown; losses; power MOSFET; power semiconductor diodes; rectifying circuits; semiconductor device models; switching circuits; 1 to 10 MHz; 2-dimensional device simulations; RC loss factor; UMOS structure; body diode recovery time; breakdown voltage; converter losses reduction; high frequency synchronous rectification; input capacitance; internal parameters optimisation; loss factor; on-state resistance; performance factors; power MOSFET; switching-mode power supplies; synchronous rectifiers; Design optimization; Frequency conversion; Immune system; Low voltage; MOSFET circuits; Performance loss; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
Journal_Title :
Power Electronics, IEEE Transactions on
