Title :
Activation Energy of Defects in Neutron Irradiated Silicon
Author :
Price, J.C. ; Kiss, A.E.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, England
Abstract :
Annealing studies of defects introduced in Si by a fast neutron flux have been made, using planar transistor samples to follow changes in minority carrier lifetime. An activation energy of 1.2 ± 0.1 eV was obtained from measurements of annealing over the range 100°C to 156°C.
Keywords :
Annealing; Boron; Charge carrier lifetime; Inductors; Laboratories; Neutrons; Radiative recombination; Silicon; Telecommunication standards; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1968.4324996
