Title :
1 GHz GaInAs:Fe photoconductive optical AND gate with approximately 100 fJ switching energy for time-division access fibre networks
Author :
Desurvire, E. ; Tell, B. ; Kaminow, I.P. ; Brown-Goebeler, K.F. ; Burrus, C.A. ; Miller, B.I. ; Koren, U.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
A high-speed, three-port optical AND gate based on GaInAs:Fe photoconductive switches operating at lambda =1.3 mu m is demonstrated. An electrical power contrast ratio of 12 dB is obtained in optical-to-electrical time-division demultiplexing of a 1 GHz signal bit sequence by a 333.3 MHz clock with optical pulse energies of 100 fJ.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; optical communication equipment; optical logic; photoconducting devices; 1 GHz; 1.3 micron; 333.3 MHz; GaInAs:Fe; bit sequence; electrical power contrast ratio; optical pulse energies; optical-to-electrical time-division demultiplexing; photoconductive optical AND gate; switching energy; three-port; time-division access fibre networks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890078
