DocumentCode :
788811
Title :
Effect of deposition parameters on exchange bias studied using Lorentz and high-resolution electron microscopy
Author :
Ramadurai, B. ; Smith, David.J.
Author_Institution :
Center for Solid State Sci., Arizona State Univ., Tempe, AZ, USA
Volume :
39
Issue :
5
fYear :
2003
Firstpage :
2732
Lastpage :
2734
Abstract :
The effects of key deposition parameters on NiO-Py and NiMn-Py bilayers have been systematically investigated, which include the: 1) effect of annealing; 2) partial pressure of N2 during permalloy deposition; and 3) presence or absence of Ta buffer layer. The 7% N2 partial pressure induced (200) growth, whereas its absence during Ni81Fe19(Py) deposition induced (111) growth. The presence of Ta in conjunction with N2 partial pressure controlled the growth and orientation of the exchange-bias layer. Lorentz microscopy was used to investigate the magnetic-domain reversal mechanisms and a high-resolution electron microscopy was used to correlate microstructure with magnetic behavior.
Keywords :
Permalloy; annealing; antiferromagnetic materials; exchange interactions (electron); ferromagnetic materials; magnetic domains; magnetic force microscopy; magnetic thin films; magnetisation reversal; manganese alloys; nickel alloys; nickel compounds; sputtered coatings; transmission electron microscopy; Lorentz electron microscopy; N2; Ni81Fe19-NiMn; Ni81Fe19-NiO; NiMn-Py bilayers; NiO-Py bilayers; Permalloy; annealing; antiferromagnet; deposition parameters; exchange bias; exchange-bias layer; high-resolution electron microscopy; magnetic-domain reversal mechanisms; microstructure; orientation; Annealing; Antiferromagnetic materials; Atomic force microscopy; Crystalline materials; Electron microscopy; Magnetic anisotropy; Magnetic force microscopy; Magnetic properties; Perpendicular magnetic anisotropy; Solid state circuits;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2003.815579
Filename :
1233200
Link To Document :
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