Title :
Influence of the spin structure on the exchange bias of antiferromagnetic and ferromagnetic bilayer
Author :
Mitsumata, C. ; Sakuma, A. ; Fukamichi, K.
Author_Institution :
Adv. Electron. Res. Lab., Hitachi Metals Ltd., Kumagaya, Japan
Abstract :
The exchange coupling bias field in the antiferromagnetic (AFM) and ferromagnetic bilayer system is investigated within the framework of the classical Heisenberg model. The spin structures in L10-type ordered and disordered γ phase of AFM alloys including magnetic and nonmagnetic atoms are calculated, and the magnetization loops are obtained by using the Landau-Lifshitz motion equation. The AFM layer having the 3Q structure can generate an exchange bias field. However, no magnetization loop shift can be obtained in cases of the 1Q, 2Q, and AF-I structures of AFM alloys.
Keywords :
Heisenberg model; exchange interactions (electron); interface magnetism; magnetic thin films; magnetisation; L10-type ordered phase; Landau-Lifshitz motion equation; alloys; antiferromagnet-ferromagnet bilayer; classical Heisenberg model; disordered γ phase; exchange coupling bias field; magnetization loops; Anisotropic magnetoresistance; Antiferromagnetic materials; Atomic layer deposition; Equations; Helium; Magnetic anisotropy; Magnetic domain walls; Magnetic memory; Magnetization; Perpendicular magnetic anisotropy;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.815582