• DocumentCode
    788888
  • Title

    High-power AlGaN/GaN HEMTs on resistive silicon substrate

  • Author

    Hoel, Virginie ; Vellas, N. ; Gaquiere, Christopher ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F. ; Natali, I. ; Massies, J.

  • Author_Institution
    IEMN, Univ. des Sci. et Technol. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    38
  • Issue
    14
  • fYear
    2002
  • fDate
    7/4/2002 12:00:00 AM
  • Firstpage
    750
  • Lastpage
    752
  • Abstract
    A process to fabricate AlGaN/GaN HEMTs based on (111) silicon substrate is developed. The device structure is grown on a resistive (111) silicon substrate. The frequency Ft is 28 GHz and the frequency Fmax is 50 GHz. At 4 GHz, the power density is 1 W/mm for a 150 × 1 μm2 device
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; 28 GHz; 4 GHz; 50 GHz; AlGaN-GaN; Si; fabrication process; high-power AlGaN/GaN HEMT; resistive silicon substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020522
  • Filename
    1019891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=788888