DocumentCode :
788888
Title :
High-power AlGaN/GaN HEMTs on resistive silicon substrate
Author :
Hoel, Virginie ; Vellas, N. ; Gaquiere, Christopher ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F. ; Natali, I. ; Massies, J.
Author_Institution :
IEMN, Univ. des Sci. et Technol. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume :
38
Issue :
14
fYear :
2002
fDate :
7/4/2002 12:00:00 AM
Firstpage :
750
Lastpage :
752
Abstract :
A process to fabricate AlGaN/GaN HEMTs based on (111) silicon substrate is developed. The device structure is grown on a resistive (111) silicon substrate. The frequency Ft is 28 GHz and the frequency Fmax is 50 GHz. At 4 GHz, the power density is 1 W/mm for a 150 × 1 μm2 device
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; 28 GHz; 4 GHz; 50 GHz; AlGaN-GaN; Si; fabrication process; high-power AlGaN/GaN HEMT; resistive silicon substrate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020522
Filename :
1019891
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=788888
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