Carrier Scattering from Defects in Neutron-Bombarded Semiconductors

Recent experimental evidence for the clustering of defects in neutron-irradiated semiconductors has led to a revived interest in the model proposed by Gossick (Ref. 2). This paper presents some theoretical extensions of Gossick´s model, in which a simple defect model is used to describe some structure-sensitive properties. Poisson´s equation and equations for carrier density have been solved for the model in the depletion approximation. The carrier-scattering mobility has been calculated from the Born approximation for scattering and the potential derived from Poisson´s equation, and the results of the calculation are compared with some experiments.