Title :
Proposal and analysis of a ferromagnetic triple-barrier resonant-tunneling spin filter
Author :
Uemura, Tetsuya ; Marukame, Takao ; Yamamoto, Masafumi
Author_Institution :
Div. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
A novel spin filter consisting of a triple-barrier resonant tunneling system in the form F/I/N/I/F/I/F is proposed, where F, I, and N represent a ferromagnetic material, an insulator, and a nonmagnetic material, respectively. The spin-dependent tunneling current in the triple-barrier resonant tunneling system is calculated theoretically on the basis of a Tsu-Esaki formula to investigate the output tunnel current polarization. Detailed calculations using the GaMnAs/AlAs/GaAs material system show that the two clear split peaks originating from up- and down-spin holes appear in the current-voltage (I-V) curve due to spin splitting of the energy levels formed in the ferromagnetic quantum well. The polarization can reach more than 98% at the peak positions in the I-V curve.
Keywords :
III-V semiconductors; aluminium compounds; ferromagnetic materials; gallium arsenide; magnetic multilayers; manganese compounds; resonant tunnelling; semimagnetic semiconductors; spin polarised transport; F/I/N/I/F/I/F; GaMnAs-AlAs-GaAs; Tsu-Esaki formula; current-voltage curve; ferromagnetic quantum well; ferromagnetic triple-barrier resonant-tunneling spin filter; output tunnel current polarization; polarization; spin-dependent tunneling; triple-barrier resonant tunneling system; Energy states; Filters; Magnetic materials; Magnetic resonance; Magnetic separation; Magnetic tunneling; Polarization; Proposals; Resonant tunneling devices; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.815719