Magnetoresistance modulation in single-electron transistors

Author

Jalil, M.B.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

39

Issue

5

fYear

2003

Firstpage

2818

Lastpage

2820

Abstract

The tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor, consisting of an ultrasmall "island" electrode separated from contact electrodes by thin tunnel barriers, is modeled. The TMR of the device can be modulated externally via gate V_g or source-drain V voltages. When the tunnel resistance R_t is highly asymmetric, the TMR shows periodic spike modulation with V_g. For symmetric R_t, a linear (sawtooth) modulation occurs instead. In the presence of spin accumulation, a sharp change of TMR ratio of up to 25% is obtained at a certain critical voltage.

Keywords

Coulomb blockade; ferromagnetism; single electron transistors; tunnelling magnetoresistance; Coulomb blockade; contact electrodes; critical voltage; ferromagnetic single-electron transistors; gate voltages; linear sawtooth modulation; magnetoresistance modulation; periodic spike modulation; source-drain voltages; thin tunnel barriers; tunnel resistance; tunneling magnetoresistance; ultrasmall island electrode; Contact resistance; Electrodes; Magnetic modulators; Magnetic switching; Material storage; Single electron transistors; Switches; Thermal resistance; Tunneling magnetoresistance; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2003.815722

Filename

1233226