An empirical model to determine the grain size of metal-induced lateral crystallized film

Author

Chan, Victor W.C. ; Chan, Philip C.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

49

Issue

8

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1399

Lastpage

1404

Abstract

Thin-film transistors (TFTs) have been fabricated using the nickel-seeded metal-induced lateral crystallization (MILC), in which an amorphous silicon is crystallized to form a large grain polysilicon film. Single crystal SOI, solid phase crystallization (SPC), and MILC TFTs were fabricated and the carrier mobilities extracted. Different types of devices have different variations in electrical properties. An empirical model based on the presence of the grain boundaries is proposed to explain the experimental results. The experimental data was used to extract the model parameters and the number of grains and grain size present in the device channel. The results can be further used to optimize the crystallization process and the device design.

Keywords

MOSFET; carrier mobility; crystallisation; grain boundaries; grain size; semiconductor device models; semiconductor thin films; silicon; thin film transistors; MILC TFTs; Ni-seeded metal-induced lateral crystallization; PMOSFETs; Si; amorphous Si; carrier mobilities; device channel; electrical properties; empirical model; grain boundaries; grain boundary effect; grain size; large grain polysilicon film; metal-induced lateral crystallization TFT; metal-induced lateral crystallized film; model parameters extraction; single crystal SOI TFTs; solid phase crystallization TFTs; surface roughness; thin-film transistors; Crystallization; Data mining; Electric variables; Grain boundaries; Grain size; Nickel; Semiconductor films; Silicon; Solids; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.801269

Filename

1019926