• DocumentCode
    789269
  • Title

    Effects of the aspect ratio of a word line on the self-field in the presence of a keeper layer

  • Author

    Kim, K.S. ; Lee, C.E. ; Lim, S.H.

  • Author_Institution
    Dept. of Phys., Korea Univ., Seoul, South Korea
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • Firstpage
    2857
  • Lastpage
    2859
  • Abstract
    The self-field from a word line containing a soft magnetic keeper layer in the geometry relevant to magnetic random access memory is calculated by using a finite-element method. A significant increase of the self-field is observed by the introduction of the soft magnetic keeper layer. Furthermore, the magnitude of the self-field is found to vary greatly with the aspect ratio of the word line in the presence of the keeper layer. In the aspect ratio range from 0.25 to 16 but at a constant cross-sectional area of 1 μm2, the self-field initially increases with the increase of the aspect ratio, reaches a maximum at an aspect ratio of 4, and then decreases with the further increase of the aspect ratio. The present results emphasize the importance of optimizing the shape of a word line containing a soft magnetic keeper layer.
  • Keywords
    giant magnetoresistance; magnetic storage; magnetic tunnelling; magnetoresistive devices; random-access storage; aspect ratio; finite-element method; keeper layer; magnetic random access memory; magnetic tunnel junction; self-field; word line; Computer simulation; Finite element methods; Geometry; Magnetic switching; Magnetic tunneling; Magnetostatics; Random access memory; Shape; Soft magnetic materials; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.816245
  • Filename
    1233239