Channel noise modeling of deep submicron MOSFETs

Author

Chen, Chih-Hung ; Deen, M. Jamal

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

Volume

49

Issue

8

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1484

Lastpage

1487

Abstract

This brief presents a new channel noise model using the channel length modulation (CLM) effect to calculate the channel noise of deep submicron MOSFETs. Based on the new channel noise model, the simulated noise spectral densities of the devices fabricated in a 0.18 μm CMOS process as a function of channel length and bias condition are compared to the channel noise directly extracted from RF noise measurements. In addition, the hot electron effect and the noise contributed from the velocity saturation region are discussed.

Keywords

MOSFET; hot carriers; semiconductor device models; semiconductor device noise; thermal noise; bias condition; channel length; channel length modulation effect; channel noise model; deep submicron MOSFET; gradual channel region; high-frequency noise modeling; hot electron effect; inversion charge model; noise spectral densities; thermal noise; velocity saturation region; CMOS process; Circuit noise; Integrated circuit noise; MOSFETs; Noise generators; Noise measurement; Predictive models; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.801229

Filename

1019937