Title :
Radiation Effects upon Gallium Arsenide Devices
Author :
Schnurr, R.H. ; Southward, H.D.
Author_Institution :
University of New Mexico Albuquerque, New Mexico
Abstract :
The behavior of gallium arsenide Gunn oscillators, transistors, Schottky barrier diodes and optoelectronic pulse amplifier, were investigated in a flash X-ray environment. The damaging effects of fast neutrons from a pulsed reactor were also observed. When possible, the resultant data were compared with available data for similar silicon devices.
Keywords :
Gallium arsenide; Gunn devices; Inductors; Neutrons; Oscillators; Pulse amplifiers; Radiation effects; Schottky barriers; Schottky diodes; Silicon devices;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1968.4325061
