DocumentCode
789550
Title
A novel phase measurement technique for IM3 components in RF power amplifiers
Author
Lee, Seung-Yup ; Lee, Yong-Sub ; Jeon, Yoon-Ha
Author_Institution
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Gyungbuk
Volume
54
Issue
1
fYear
2006
Firstpage
451
Lastpage
457
Abstract
This paper presents a novel measurement technique to measure the phases of intermodulation (IM) components of RF power amplifiers (PAs) with low-cost. This method can measure the phase distortions of the third-order IM components, as well as the fundamental signals generated in the PAs themselves by directly comparing the respective IM components before and after the PAs. A 45-W RF PA with an LDMOSFET in the wide-band code-division multiple-access band is implemented, and the relative changes of the IM phases of the PA are presented under various tone spacings, output power levels, and gate bias voltages. This system is very convenient for evaluating the memory effects of the PAs, and is helpful for the design of predistortion PAs and for the model extraction of PAs
Keywords
MOSFET; code division multiple access; phase measurement; power amplifiers; radiofrequency amplifiers; 45 W; IM3 components; LDMOSFET; RF power amplifiers; gate bias voltages; phase distortions; phase measurement; tone spacings; wideband code division multiple access band; Broadband amplifiers; Distortion measurement; Measurement techniques; Phase distortion; Phase measurement; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Signal generators; LDMOSFET; memory effects; phase measurement; power amplifier (PA); sweet spots; two-tone test;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2005.860498
Filename
1573843
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