Title :
Surface and sensing properties of PE-ALD SnO2 thin film
Author :
Lee, W. ; Hong, K. ; Park, Y. ; Kim, N.-H. ; Choi, Y. ; Park, J.
Author_Institution :
Dept. of Chem., Chonnam Univ., Gwangju, South Korea
fDate :
4/14/2005 12:00:00 AM
Abstract :
SnO2 thin films have been deposited by plasma enhanced-atomic layer deposition (PE-ALD) on Si (100) substrate. The dominant oxygen species for post-annealing films were O2-, O2- and O- for 100, 200 and 400 cycles, respectively. The film for 200 cycles has a good CO sensing property at the highest concentration of O2- species.
Keywords :
atomic layer deposition; elemental semiconductors; plasma deposition; semiconductor thin films; tin; O2- species; PE-ALD SnO2 thin film; Si 100 substrate; SnO2; dominant oxygen species; good CO sensing property; plasma enhanced-atomic layer deposition; post-annealing films; sensing properties; surface properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058174
