A 4-kV/2-A/5-kHz Compact Modulator for Nitrogen Plasma Ion Implantation

Author

Rossi, José O. ; Barroso, Joaquim J. ; Ueda, Mario ; Da Silva, Graziela

Author_Institution

Space Res. Nat. Inst.

Volume

34

Issue

5

fYear

2006

Firstpage

1757

Lastpage

1765

Abstract

To treat stainless-steel surfaces by nitrogen plasma implantation, a solid-state compact modulator was devised, in which a 8.0-muF capacitor discharges through a forward converter composed of a low-blocking-voltage insulated-gate-bipolar-transistor switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, a modulator was built to produce pulses with amplitudes of the order of 4 kV, duration of about 5.0 mus, and rise time of ~1.0 mus with maximum current/frequencies capabilities of 2.0 A and 5 kHz, respectively

Keywords

modulators; plasma immersion ion implantation; power transformers; pulse transformers; stainless steel; surface treatment; switching convertors; 1.0 kV; 2 A; 4 kV; 5 kHz; 8.0 muF; capacitor discharges; forward converter; hard-tube devices; insulated-gate-bipolar-transistor switch; nitrogen plasma ion implantation; pulse transformers; solid-state compact modulator; stainless-steel surfaces; Ion implantation; Nitrogen; Plasma devices; Plasma immersion ion implantation; Pulse modulation; Pulse transformers; Solid state circuits; Surface discharges; Surface treatment; Switches; Compact pulser; dc converter; insulated-gate bipolar transistor (IGBT) switch; nitrogen plasma implantation; pulse transformer; surface treatment;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2006.883338

Filename

1710037