Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel

Author

Chaji, G.R. ; Servati, P. ; Nathan, Arokia

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada

Volume

41

Issue

8

fYear

2005

fDate

4/14/2005 12:00:00 AM

Firstpage

499

Lastpage

500

Abstract

The amorphous silicon (a-Si) thin film transistor (TFT) backplane is becoming the technology of choice for active matrix organic light emitting diode (AMOLED) displays in view of its industrial accessibility and low fabrication cost over large area. However, the a-Si TFT suffers from threshold voltage (V_T) shift. Presented is the simplest voltage-programmed pixel with an ability to compensate for the V_T-shift in the drive TFT of the AMOLED pixel circuit. Simulation results also show that the pixel circuit can tolerate the spatial mismatch, temperature variation, and mechanical stress.

Keywords

LED displays; amorphous semiconductors; driver circuits; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; 2-TFT a-Si AMOLED pixel circuit; Si; active matrix organic light emitting diode displays; amorphous silicon thin film transistor backplane; driving scheme; mechanical stress tolerance; spatial mismatch tolerance; stable operation; temperature variation tolerance; threshold voltage shift; voltage-programmed pixel;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20058209

Filename

1425369