DocumentCode
789951
Title
Full/partial depletion effects in FinFETs
Author
Xiong, W. ; Cleavelin, C. Rinn ; Wise, R. ; Yu, S. ; Pas, M. ; Zaman, R.J. ; Gostkowski, M. ; Matthews, K. ; Maleville, C. ; Patruno, P. ; King, T.-J. ; Colinge, J.P.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
41
Issue
8
fYear
2005
fDate
4/14/2005 12:00:00 AM
Firstpage
504
Lastpage
506
Abstract
Effects that are found exclusively in partially depleted or fully depleted SOI MOSFETs are shown to appear simultaneously in n-channel FinFETs. The gate-induced floating body effect is normally observed in partially depleted devices only, while ideal subthreshold slope is an exclusive trademark of fully depleted devices. Both effects can be observed concurrently in fully depleted FinFETs if the application of a back bias creates an accumulation layer at the bottom of the device.
Keywords
MOSFET; field effect transistors; silicon-on-insulator; FinFET; SOI MOSFET; back bias; full depletion effects; gate-induced floating body effect; ideal subthreshold slope; partial depletion effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20050281
Filename
1425373
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