Title :
Threshold currents of 1.2-1.55 μm P-substrate buried crescent laser diodes
Author :
Kakimoto, S. ; Takemoto, A. ; Sakakibara, Y. ; Nakajima, Y. ; Fujiwara, M.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
P-substrate buried crescent (PCB) laser diodes whose wavelength ranged from 1.2 to 1.55 μm have been fabricated. The threshold currents as low as 10 mA have been obtained in this wavelength range experimentally. The calculated threshold currents of 13, 13, and 14 mA at 1.2, 1.3, and 1.55 μm almost coincide with the measured values
Keywords :
laser transitions; semiconductor junction lasers; 1.2 to 1.55 micron; P-substrate buried crescent laser diodes; calculated threshold currents; wavelength range; Current measurement; Diode lasers; Etching; Fiber lasers; Laser modes; Optical coupling; Tellurium; Threshold current; Wavelength measurement; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
