A voltage tunable threshold logic gate based on multiquantum-well heterojunction bipolar transistor for multifunction logic

Author

Goswami, S. ; Singh, J. ; Bhattacharya, P.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

28

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1636

Lastpage

1639

Abstract

The properties of a heterojunction bipolar transistor with a multiquantum-well collector region for its application as a voltage tunable logic element are examined. The quantum confined Stark effect gives rise to a strong negative differential resistance in the photocurrent-voltage characteristic of the device, which allows the device to be switched optically and/or electronically. This permits the realization of a circuit where the NAND, INVERSE CARRY, and NOR logic functions can be implemented by simply changing the biasing

Keywords

bipolar integrated circuits; heterojunction bipolar transistors; integrated logic circuits; logic gates; semiconductor quantum wells; INVERSE CARRY; NAND; NOR logic functions; biasing; multifunction logic; multiquantum-well collector region; multiquantum-well heterojunction bipolar transistor; negative differential resistance; photocurrent-voltage characteristic; quantum confined Stark effect; voltage tunable threshold logic gate; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Logic devices; Logic functions; Logic gates; Quantum well devices; Stark effect; Stimulated emission; Threshold voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.142548

Filename

142548