A simple process to produce a high quality silicon surface prior to selective epitaxial growth

A simple and low-cost process was devised to eliminate etch damage resulting from oxide etching on the seed-hole surface prior to selective epitaxial growth (SEG) of silicon. The process consists of a low power C/sub 2/F/sub 6/ RIE step which was performed right after the oxide etch step in the same etch reactor. The use of this step excluded the need of a conventional sacrificial oxide to remove damaged silicon regions and residual polymers. The n-p diodes resulting from n-type SEG grown on p-type substrate were used to evaluate the quality of the silicon surface prior to SEG.<>