DocumentCode
790958
Title
Low-temperature processed MOSFETs with liquid phase deposited SiO/sub 2-x/Fx as gate insulator
Author
Ching-Fa Yeh ; Shyue-Shyh Lin ; Tzy-Yan Hong
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
16
Issue
7
fYear
1995
fDate
7/1/1995 12:00:00 AM
Firstpage
316
Lastpage
318
Abstract
Device performances of MOSFETs with SiO/sub 2-x/F/sub x/ gate oxides prepared by an extremely low-temperature (15/spl deg/C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (μ/sub eff/) of 525 cm2/V/spl middot/s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD SiO/sub 2-x/F/sub x/ can be a suitable candidate for future gate insulators in low-temperature processed MOSFETs.
Keywords
MOSFET; insulating thin films; semiconductor technology; silicon compounds; 15 C; Si-SiO/sub 2/F; electrical characteristics; gate insulator; liquid phase deposited SiO/sub 2-x/F/sub x/; low-temperature processed MOSFET; peak effective mobility; subthreshold swing; threshold voltage; Aluminum; Dielectric liquids; Electric breakdown; Electric variables; Impurities; Insulation; MOSFETs; Silicon; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.388719
Filename
388719
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